Virtual Device for Calculating Parameters of Epitaxial Layers in the Cultivation of Heterostructures

Authors

  • Kirill Suchoruchenkov Saint Petersburg Electrotechnical University, 5, building 3, st. Professora Popova, 197022, Saint Petersburg, Russia
  • Evgenia Maraeva Saint Petersburg Electrotechnical University, 5, building 3, st. Professora Popova, 197022, Saint Petersburg, Russia
  • Olga Alexandrova Saint Petersburg Electrotechnical University, 5, building 3, st. Professora Popova, 197022, Saint Petersburg, Russia

DOI:

https://doi.org/10.32603/10.32603/2071-2340-2023-1-96-105

Keywords:

epitaxy, solid solution, grid parameter, energy gap, semiconductor monocrystal, LabVIEW programming environment

Abstract

The work is devoted to the creation of a program that allows one to simulate the process of epitaxy and cultivation of semiconductor monocrystals depending on technological parameters. The process of directed growth of one crystal on the surface of another is considered. The term “directed growth” implies that in the presence of a large number of origin centers and their further coalescence (the process of fusion of particles inside the mobile medium (liquid, gas) or on the surface of the body) the emerging epitaxial layer will be monocrystalline, that allows you to specify the planes and directions in the substrate and epitaxial layer, equally oriented in space. The virtual device is intended for use by students and teachers in distance learning and in full-time mode.

Author Biographies

  • Kirill Suchoruchenkov, Saint Petersburg Electrotechnical University, 5, building 3, st. Professora Popova, 197022, Saint Petersburg, Russia

    Student of the Department of Micro- and Nanoelectronics, Saint Petersburg Electrotechnical University, skv1999@yandex.ru

  • Evgenia Maraeva, Saint Petersburg Electrotechnical University, 5, building 3, st. Professora Popova, 197022, Saint Petersburg, Russia

    Candidate of Physical and Mathematical Sciences, Associate Professor of the Department of Micro- and Nanoelectronics, Saint Petersburg Electrotechnical University, jenvmar@mail.ru

  • Olga Alexandrova, Saint Petersburg Electrotechnical University, 5, building 3, st. Professora Popova, 197022, Saint Petersburg, Russia

    Candidate of Physical and Mathematical Sciences, Associate Professor of the Department of Micro- and Nanoelectronics, Saint Petersburg Electrotechnical University, oaaleksandrova@gmail.com

References

J. Travis, LabVIEW for Everyone, Мoscow: DMK Press; PriborKomplekt, 2005 (in Russian).

O. A. Aleksandrova, A. O. Lebedev, and E. V. Maraeva, Vvedenie v tekhnologiyu materialov mikroelektroniki, vol. 1., Saint Petersburg, Russia: Izd-vo LAN, 2023 (in Russian).

O. A. Aleksandrova, A. O. Lebedev, and E. V. Maraeva, Vvedenie v tekhnologiyu materialov mikroelektroniki, vol. 3., Saint Petersburg, Russia: Izd-vo LAN, 2023 (in Russian).

K. V. Sukhoruchenkov, E. V. Maraeva, and O. A. Alexandrova, “Simulation of the Process of Growing Semiconductor Single Crystals by the Czochralski Method,” Computer tools in education, no. 4, pp. 99–108, 2021 (in Russian); doi:10.32603/2071-2340-2021-4-99-108

K. Suchoruchenkov, E. Maraeva, and O. Alexandrova, “Simulation of Purification Conditions and the Process of Growing Semiconductor Single Crystals by the Zone Melting Method,” Computer tools in education, no. 2, pp. 19–31, 2022 (in Russian); doi:10.32603/2071-2340-2022-2-19-31

L. Matyushkin, “Software For Absorption And Luminescence Spectra reseach Of Quantum-sized Nanostructures,” Tekhnicheskie nauki — ot teorii k praktike, no. 24, pp. 154–158, 2013 (in Russian).

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Published

2023-03-28

Issue

No. 1 (2023)

Section

Computers in the teaching process

License

How to Cite

[1]
K. Suchoruchenkov, E. Maraeva, and O. Alexandrova, “Virtual Device for Calculating Parameters of Epitaxial Layers in the Cultivation of Heterostructures”, Компьютерные инструменты в образовании, no. 1, pp. 96–105, Mar. 2023, doi: 10.32603/10.32603/2071-2340-2023-1-96-105.

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